Izinto ezintsha eziphikisayo zamaziko e-ferrosilicon asebenzayo

Iziko ze-Ferrosilicon zikhiqiza ikakhulukazi i-ferrosilicon, i-ferromanganese, i-ferrochromium, i-ferrotungsten, ne-silicon-manganese alloys. Indlela yokukhiqiza iwukudlisa ngokuqhubekayo kanye nokuthinta ngezikhathi ezithile kwe-iron slag. Kuyisithando somlilo sikagesi sezimboni esisebenza ngokuqhubekayo.

Isithando somlilo se-Ferrosilicon siwuhlobo lwesithando somlilo osebenzisa amandla amaningi, olunganciphisa ukusetshenziswa kwamandla nokwandisa ukuphuma, ukuze ukuphila kwesithando somlilo kusetshenziswe isikhathi eside. Kungale ndlela kuphela lapho izindleko zokukhiqiza zebhizinisi kanye nokukhishwa okungcolile kwensalela yemfucuza kungancishiswa. Okulandelayo kwethula amazinga okushisa okusabela ahlukene weziko le-ferrosilicon. Ukusetshenziswa kwezinto eziphikisayo zezinto ezihlukene kungokwereferensi kuphela.

Indawo entsha yokushisa kuqala: Ungqimba olungaphezulu lungaba ngu-500mm, olunezinga lokushisa elingu-500℃-1000℃, ukugeleza komoya okuphezulu, ukushisa kwe-electrode conduction, ukusha kweshaja engaphezulu, kanye nokusabalalisa ukushisa kwamanje ukumelana nokushisa. Izinga lokushisa lale ngxenye lihlukile, futhi lifakwe izitini zobumba.

Indawo yokushisa kuqala: Ngemva kokuba amanzi ehwamukile, ukushaja kuzoya phansi kancane kancane futhi kube nezinguquko zokuqala kufomu lekristalu ye-silica endaweni yokushisa, kunwetshwe ngevolumu, bese kuqhekeka noma kuqhume. Izinga lokushisa kulesi sigaba licishe libe ngu-1300°C. Yakhiwe ngezitini eziphakeme ze-alumina.

Indawo ye-Sintering: Igobolondo le-crucible. Izinga lokushisa liphakathi kuka-1500 ℃ no-1700 ℃. I-silicon ewuketshezi nensimbi kukhiqizwa bese kuconselwa echibini elincibilikisiwe. I-sintering kanye nokungena kwegesi kwempahla yesithando somlilo kubi. Amabhulokhi kufanele aphulwe ukuze kubuyiselwe umoya wegesi futhi kwandise ukumelana. Izinga lokushisa kule ndawo liphezulu. Kugqwala kakhulu. Yakhiwe ngezitini ze-semi-graphitic carbon - carbonized silicon.

Indawo yokunciphisa: Inani elikhulu lezindawo eziqinile zokusabela kwamakhemikhali. Izinga lokushisa le-crucible zone liphakathi kuka-1750°C no-2000°C. Ingxenye engezansi ixhunywe emgodini we-arc futhi isetshenziselwa ukubola kwe-SIC, ukukhiqizwa kwe-ferrosilicon, ukusabela kwe-Si2O ye-liquid ne-C ne-Si, njll. .

I-arc zone: Endaweni yomgodi phansi kwe-electrode, izinga lokushisa lingaphezu kuka-2000°C. Izinga lokushisa kule ndawo liyindawo yokushisa ephakeme kunazo zonke esithandweni somlilo kanye nomthombo wokusabalalisa okukhulu kwezinga lokushisa kuwo wonke umzimba wesithando somlilo. Ngakho-ke, lapho i-electrode ifakwe kancane, izinga lokushisa eliphezulu liya phezulu, futhi izinga lokushisa elingaphansi kwesithando somlilo I-slag encibilikisiwe ephansi ayikhishwa kancane, yenze iphansi lesithando somlilo esingamanga, okwenza imbobo yompompi inyukele phezulu. Iphansi elithile lesithando somlilo lamanga linezinzuzo ezithile zokuvikela isithando somlilo. Ngokuvamile, ukujula kokufakwa kwe-electrode kuhlobene kakhulu nobubanzi be-electrode. Ukujula okuvamile kokufakwa kufanele kugcinwe ku-400mm-500mm kusukela phansi kwesithando somlilo. Le ngxenye inezinga eliphezulu lokushisa futhi yakhiwe ngezitini zamalahle ezigazingiwe ezinga-semi-graphite.

Ungqimba oluhlala njalo lwenziwe ngokhonkolo lwe-phosphate noma izitini zobumba. Umnyango wesithando somlilo ungaphonswa nge-corundum castables noma ubekwe ngaphambili ngezitini ze-silicon carbide.

Ngamafuphi, ngokuya ngosayizi, izinga lokushisa, kanye ne-corrosion degree yesithando somlilo se-ferrosilicon, izinto ezifanele, ezinobungani bemvelo, kanye nezinto ezihlukene zezitini eziphikisayo nezinsimbi kufanele zikhethwe ukuze kufakwe ulwelwesi.